Passive capacitively-coupled electrostatic (CCE) probe arrangement for detecting plasma instabilities in a plasma processing chamber
US8179152B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 7, 2009 |
| Grant date | May 15, 2012 |
| Priority date | — |
| Expiry date | Jul 12, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32935
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An arrangement for detecting plasma instability within a processing chamber of a plasma processing system during substrate processing is provided. The arrangement includes a probe arrangement, wherein the probe arrangement is disposed on a surface of the processing chamber and is configured to measure at least one plasma processing parameter. The probe arrangement includes a plasma-facing sensor and a measuring capacitor, wherein the plasma-facing sensor is coupled to a first plate of the measuring capacitor. The arrangement also includes a detection arrangement, which is coupled to a second plate of the measuring capacitor. The detection arrangement is configured to convert an induced current flowing through the measuring capacitor into a set of digital signals, the set of digital signals being processed to detect the plasma instability.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.