Method of manufacturing a semiconductor device with quantum dots formed by self-assembled growth
US8183073B2 · kind B2 · utility
2Cited by
23References
14Claims
0Family size
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Key dates
| Filing date | Dec 16, 2010 |
| Grant date | May 22, 2012 |
| Priority date | — |
| Expiry date | Dec 16, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/812
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The method of manufacturing the semiconductor device comprises the step of forming quantum dots 16 on a base layer 10 by self-assembled growth; the step of irradiating Sb or GaSb to the surface of the base layer 10 before or in the step of forming quantum dots 16; the step of etching the surfaces of the quantum dots 16 with an As raw material gas to thereby remove an InSb layer 18 containing Sb deposited on the surfaces of the quantum dots 16; and growing a capping layer 22 on the quantum dots 16 with the InSb layer 18 removed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.