Memory cells, methods of forming dielectric materials, and methods of forming memory cells

US8183110B2 · kind B2 · utility

Assignee

• Micron Technology, Inc. · US

Inventors

• D. V. Nirmal Ramaswamy · Boise, US
• Noel Rocklein · Boise, US
• Kyu S. Min · San Jose, US

Key dates

• Filing date: May 26, 2011
• Grant date: May 22, 2012
• Expiry date: May 26, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/693

Abstract

Some embodiments include memory cells. The memory cells may include a tunnel dielectric material, a charge-retaining region over the tunnel dielectric material, crystalline ultra-high k dielectric material over the charge-retaining region, and a control gate material over the crystalline ultra-high k dielectric material. Additionally, the memory cells may include an amorphous region between the charge-retaining region and the crystalline ultra-high k dielectric material, and/or may include an amorphous region between the crystalline ultra-high k dielectric material and the control gate material. Some embodiments include methods of forming memory cells which contain an amorphous region between a charge-retaining region and a crystalline ultra-high k dielectric material, and/or which contain an amorphous region between a crystalline ultra-high k dielectric material and a control gate material.