Method of forming capacitors, and methods of utilizing silicon dioxide-containing masking structures
US8183157B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 22, 2011 |
| Grant date | May 22, 2012 |
| Priority date | — |
| Expiry date | Feb 22, 2031 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/43
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Some embodiments include methods of forming capacitors. Storage nodes are formed within a material. The storage nodes have sidewalls along the material. Some of the material is removed to expose portions of the sidewalls. The exposed portions of the sidewalls are coated with a substance that isn't wetted by water. Additional material is removed to expose uncoated regions of the sidewalls. The substance is removed, and then capacitor dielectric material is formed along the sidewalls of the storage nodes. Capacitor electrode material is then formed over the capacitor dielectric material. Some embodiments include methods of utilizing a silicon dioxide-containing masking structure in which the silicon dioxide of the masking structure is coated with a substance that isn't wetted by water.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.