Non-volatile magnetic memory with low switching current and high thermal stability
US8183652B2 · kind B2 · utility
22Cited by
51References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 24, 2007 |
| Grant date | May 22, 2012 |
| Priority date | — |
| Expiry date | May 18, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B61/22
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A non-volatile current-switching magnetic memory element includes a bottom electrode, a pinning layer formed on top of the bottom electrode, and a fixed layer formed on top of the pinning layer. The memory element further includes a tunnel layer formed on top of the pinning layer, a first free layer formed on top of the tunnel layer, a granular film layer formed on top of the first free layer, a second free layer formed on top of the granular film layer, a cap layer formed on top of the second free layer, and a top electrode formed on top of the cap layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.