Semiconductor component having rectifying junctions of different magnitudes and method for producing the same

US8183660B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Michael Rueb · Faak am See, AT
• Roland Rupp · Achern, DE
• Michael Treu · Villach, AT

Key dates

• Filing date: Feb 26, 2008
• Grant date: May 22, 2012
• Expiry date: Nov 7, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/8325

Abstract

A semiconductor component is proposed which has a semiconductor body having a first semiconductor zone of the first conduction type, at least one first rectifying junction with respect to the first semiconductor zone, at least one second rectifying junction with respect to the first semiconductor zone, wherein the three rectifying junctions each have a barrier height of different magnitude.