Method to minimize CD etch bias
US8187483B2 · kind B2 · utility
Inventors
Key dates
| Filing date | Aug 6, 2007 |
| Grant date | May 29, 2012 |
| Priority date | — |
| Expiry date | Apr 28, 2030 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/80
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The present invention provides a method for improving the critical dimension performance during a plasma etching process of a photolithographic substrate having a thin film. A passivation film is deposited onto the photolithographic substrate using a first set of process conditions. The deposited film is etched from the photolithographic substrate using a second set of process conditions. An exposed surface of the photolithographic substrate is etched using a third set of process conditions. During the plasma processing of the photolithographic substrate, the critical dimension performance of the photolithographic substrate is monitored to insure that the target uniformity and feature widths are obtained by adjusting the deposition and etch plasma processing of the photolithographic substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.