Method for obtaining smooth, continuous silver film
US8187945B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Oct 27, 2010 |
| Grant date | May 29, 2012 |
| Priority date | — |
| Expiry date | Oct 27, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B63/80
Abstract
A method for forming a semiconductor device including a resistive memory cell includes providing a substrate having an upper surface. A first conductive layer is formed over the upper surface of the substrate. An amorphous silicon layer is formed over the first conductive layer. A surface of the amorphous silicon layer is cleaned to remove native oxide formed on the surface of the amorphous silicon layer. A silver layer is deposited over the amorphous silicon layer after removing the native oxide by performing the cleaning step. The resistive memory cell includes the first conductive layer, the amorphous silicon layer, and the second conductive layer. The surface of the amorphous silicon layer is cleaned to prevent silver agglomeration on the native oxide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.