Method for manufacturing silicon single crystal wafer
US8187954B2 · kind B2 · utility
2Cited by
8References
1Claims
0Family size
Assignee
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Key dates
| Filing date | Jan 24, 2008 |
| Grant date | May 29, 2012 |
| Priority date | — |
| Expiry date | Feb 27, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3225
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present invention provides a method for manufacturing a silicon single crystal wafer, in which a silicon single crystal wafer that is fabricated based on a Czochralski method and has an entire plane in a radial direction formed of an N region is subjected to a rapid thermal annealing in an oxidizing atmosphere, an oxide film formed in the rapid thermal annealing in the oxidizing atmosphere is removed, and then a rapid thermal annealing is carried out in a nitriding atmosphere, an Ar atmosphere, or a mixed atmosphere of these atmospheres. As a result,
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