Yoshinori Hayamizu
11Patents
6h-index
26Co-inventors
62Inventor score
Filing activity: May 30, 1996 → Oct 6, 2008
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6544656B1 | Production method for silicon wafer and silicon wafer | Emerging Cross-Sectional Technologies | 56 | Expired |
| US6478883B1 | Silicon single crystal wafer, epitaxial silicon wafer, and methods for producing them | Electricity | 50 | Expired |
| US6140131A | Method and apparatus for detecting heavy metals in silicon wafer bulk with high sensitivity | Emerging Cross-Sectional Technologies | 16 | Expired |
| US6548035B1 | Silicon single crystal wafer for epitaxial wafer, epitaxial wafer, and methods for producing the same and evaluating the same | Electricity | 15 | Expired |
| US5916824A | Etching method of silicon wafer surface and etching apparatus of the same | Electricity | 8 | Expired |
| US6277715A | Production method for silicon epitaxial wafer | Electricity | 7 | Expired |
| US6858094B2 | Silicon wafer and silicon epitaxial wafer and production methods therefor | Electricity | 3 | Expired |
| US7081422B2 | Manufacturing process for annealed wafer and annealed wafer | Electricity | 3 | Expired |
| US6544332B1 | Method for manufacturing silicon single crystal, silicon single crystal manufactured by the method, and silicon wafer | Chemistry; Metallurgy | 2 | Expired |
| US8187954B2 | Method for manufacturing silicon single crystal wafer | Electricity | 2 | Active |
| US8492879B2 | Semiconductor substrate and semiconductor device | Electricity | 1 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.