Self aligned silicided contacts

US8187962B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventor

• Roland Hampp · Bad Abbach, DE

Key dates

• Filing date: Apr 5, 2010
• Grant date: May 29, 2012
• Expiry date: Aug 24, 2030

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/601
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Structures and methods of forming self aligned silicided contacts are disclosed. The structure includes a gate electrode disposed over an active area, a liner disposed over the gate electrode and at least a portion of the active area, an insulating layer disposed over the liner. A first contact plug is disposed in the insulating layer and the liner, the first contact plug disposed above and in contact with a portion of the active area, the first contact plug including a first conductive material. A second contact plug is disposed in the insulating layer and the liner, the second contact plug disposed above and in contact with a portion of the gate electrode, the second contact plug includes the first conductive material. A contact material layer is disposed in the active region, the contact material layer disposed under the first contact plug and includes the first conductive material.