Patent · US Active

Integrated circuit device and method

US8187964B2 · kind B2 · utility

1Cited by

38References

17Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Joachim Mahler · Regensburg, DE
Thomas Behrens · Madison, US
Ivan Galesic · Regensburg, DE

Key dates

Filing date	Oct 19, 2009
Grant date	May 29, 2012
Priority date	—
Expiry date	Feb 11, 2030

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/0002
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

An integrated circuit device includes a semiconductor chip with a metallization layer on the chip. A gas-phase deposited insulation layer is disposed on the metallization layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.