Etching method, etching apparatus and storage medium
US8187980B2 · kind B2 · utility
1Cited by
2References
5Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jan 29, 2008 |
| Grant date | May 29, 2012 |
| Priority date | — |
| Expiry date | Mar 31, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32137
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An etching method for forming a groove by etching a silicon layer of a substrate by using a mask which has a first region where an opening with a first opening width is formed and a second region where an opening with a second opening width larger than the first opening width is formed, the method includes: mounting the substrate on a mounting table in a processing chamber; converting a processing gas containing Cl2 gas, HBr gas, and one of CO gas and CO2 gas into a plasma; and etching the silicon layer by the plasma.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.