Ion source
US8188445B2 · kind B2 · utility
11Cited by
8References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 2, 2010 |
| Grant date | May 29, 2012 |
| Priority date | — |
| Expiry date | Dec 7, 2030 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/961
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An ion source includes an arc chamber having an extraction aperture, and a plasma sheath modulator positioned in the arc chamber. The plasma sheath modulator is configured to control a shape of a boundary between a plasma and a plasma sheath proximate the extraction aperture, wherein the plasma sheath modulator includes a semiconductor. A well focused ion beam having a high current density can be generated by the ion source. A high current density ion beam can improve the throughput of an associated process. The emittance of the ion beam can also be controlled.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.