Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method
US8189195B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 9, 2007 |
| Grant date | May 29, 2012 |
| Priority date | — |
| Expiry date | Jun 25, 2030 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/7065
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method of measuring a property of a substrate includes generating a patterned mask configured to cause a radiation beam passing through the mask to acquire the pattern, simulating radiating the substrate with a patterned radiation beam that has been patterned using the mask to obtain a simulated pattern, determining at least one location of the simulated pattern that is prone to patterning errors, and irradiating the substrate with the patterned radiation beam using a lithographic process. The method also includes measuring an accuracy of at least one property of the at least one location of the pattern on the substrate that has been determined as being prone to patterning errors, and adjusting the lithographic process according to the measuring.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.