Plasma particle extraction process for PECVD
US8192806B1 · kind B1 · utility
8Cited by
5References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 19, 2008 |
| Grant date | Jun 5, 2012 |
| Priority date | — |
| Expiry date | Mar 6, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05H1/466
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A plasma-enhanced chemical vapor deposition (PECVD) process including plasma particle extraction is described. Charged particles suspended in discharge volume are moved together with a plasma and can then be flushed away. The particle extraction process reduces unwanted particles on the wafer after deposition and reduces total process time. In some embodiments, the process can involve powering an electrode in the process chamber located away from the wafer. This electrode can be powered up as the main deposition electrode is powered down.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.