Semiconductor device comprising a silicon/germanium resistor

US8193066B2 · kind B2 · utility

Assignee

• GlobalFoundries Inc. · KY

Inventors

• Andreas Kurz · Oberursel, DE
• Roman Boschke · Dresden, DE
• Christoph Schwan · Gebhardshain, DE
• John Morgan · Portland, US

Key dates

• Filing date: Jun 3, 2009
• Grant date: Jun 5, 2012
• Expiry date: Nov 16, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D86/80

Abstract

In integrated circuits, resistors may be formed on the basis of a silicon/germanium material, thereby providing a reduced specific resistance which may allow reduced dimensions of the resistor elements. Furthermore, a reduced dopant concentration may be used which may allow an increased process window for adjusting resistance values while also reducing overall cycle times.