Patent · US Active

Local silicidation of via bottoms in metallization systems of semiconductor devices

US8193086B2 · kind B2 · utility

5Cited by

2References

21Claims

0Family size

Assignee

GlobalFoundries Inc. · KY

Inventors

Tobias Letz · Dresden, DE
Frank Feustel · Dresden, DE

Key dates

Filing date	Dec 17, 2009
Grant date	Jun 5, 2012
Priority date	—
Expiry date	Jan 29, 2030

Classification

Technology area (CPC H)Electricity
CPC primaryH01L21/76886
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

Electromigration behavior in complex metallization systems of semiconductor devices may be enhanced at critical areas between a metal line and a via by locally forming a copper/silicon compound. In some illustrative embodiments, the formation of the copper/silicon compound may be combined with other treatments for cleaning the exposed surface areas and/or modifying the molecular structure thereof.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.