Repairing defects in a nonvolatile semiconductor memory device utilizing a heating element
US8193573B2 · kind B2 · utility
18Cited by
6References
29Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 4, 2008 |
| Grant date | Jun 5, 2012 |
| Priority date | — |
| Expiry date | Apr 17, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/19107
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of repairing a nonvolatile semiconductor memory device to eliminate defects includes monitoring a memory endurance indicator for a nonvolatile semiconductor memory device contained in a semiconductor package. It is determined whether that the memory endurance indicator exceeds a predefined limit. Finally, in response to determining that the memory endurance indicator exceeds the predefined limit, the device is annealed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.