Patent · US Active

Semiconductor package with semiconductor core structure and method of forming the same

US8193604B2 · kind B2 · utility

136Cited by
9References
24Claims
0Family size

Assignee

Inventors

Key dates

Filing dateNov 19, 2010
Grant dateJun 5, 2012
Priority date
Expiry dateNov 19, 2030

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/3511
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A semiconductor device includes an IPD structure, a first semiconductor die mounted to the IPD structure with a flipchip interconnect, and a plurality of first conductive posts that are disposed adjacent to the first semiconductor die. The semiconductor device further includes a first molding compound that is disposed over the first conductive posts and first semiconductor die, a core structure bonded to the first conductive posts over the first semiconductor die, and a plurality of conductive TSVs disposed in the core structure. The semiconductor device further includes a plurality of second conductive posts that are disposed over the core structure, a second semiconductor die mounted over the core structure, and a second molding compound disposed over the second conductive posts and the second semiconductor die. The second semiconductor die is electrically connected to the core structure.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.