Method and apparatus of patterning semiconductor device
US8196072B2 · kind B2 · utility
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10Claims
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Key dates
| Filing date | Mar 31, 2010 |
| Grant date | Jun 5, 2012 |
| Priority date | — |
| Expiry date | Sep 25, 2030 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/70
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Provided is an apparatus for fabricating a semiconductor device. The apparatus includes a first photomask and a second photomask. The first photomask has a plurality of first features thereon, and the first photomask having a first global pattern density. The second photomask has a plurality of second features thereon, and the second photomask has a second global pattern density. The plurality of first and second features collectively define a layout image of a layer of the semiconductor device. The first and second global pattern densities have a predetermined ratio.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.