Methods of self-aligned growth of chalcogenide memory access device
US8198124B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 5, 2010 |
| Grant date | Jun 12, 2012 |
| Priority date | — |
| Expiry date | May 20, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8828
Abstract
Self-aligning fabrication methods for forming memory access devices comprising a doped chalcogenide material. The methods may be used for forming three-dimensionally stacked cross point memory arrays. The method includes forming an insulating material over a first conductive electrode, patterning the insulating material to form vias that expose portions of the first conductive electrode, forming a memory access device within the vias of the insulating material and forming a memory element over the memory access device, wherein data stored in the memory element is accessible via the memory access device. The memory access device is formed of a doped chalcogenide material and formed using a self-aligned fabrication method.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.