Patent · US Active

Transistors comprising high-k metal gate electrode structures and adapted channel semiconductor materials

US8198152B2 · kind B2 · utility

7Cited by

6References

14Claims

0Family size

Assignee

GlobalFoundries Inc. · KY

Inventors

Sven Beyer · Dresden, DE
Jan Hoentschel · Dresden, DE
Thilo Scheiper · Dresden, DE
Uwe Griebenow · Markkleeberg, DE

Key dates

Filing date	Nov 2, 2010
Grant date	Jun 12, 2012
Priority date	—
Expiry date	Nov 2, 2030

Classification

Technology area (CPC H)Electricity
CPC primaryH01L21/28123
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

In sophisticated semiconductor devices, a replacement gate approach may be applied, in which a channel semiconductor material may be provided through the gate opening prior to forming the gate dielectric material and the electrode metal. In this manner, specific channel materials may be provided in a late manufacturing stage for different transistor types, thereby providing superior transistor performance and superior flexibility in adjusting the electronic characteristics of the transistors.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.