Resistance switching memory
US8198620B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 14, 2009 |
| Grant date | Jun 12, 2012 |
| Priority date | — |
| Expiry date | Sep 27, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8833
Abstract
A resistance switching memory is introduced herein. The resistance switching memory includes a highly-insulating or resistance-switching material formed to cover the sidewall of a patterned metal line, and extended alongside a dielectric layer sidewall to further contact a portion of the top surface of the lower electrode. The other part of the top surface of the lower electrode is covered by an insulating layer between the top electrode and the lower electrode. An oxygen gettering metal layer in the lower electrode occupies a substantial central part of the top surface of the lower electrode and is partially covered by the highly-insulating or resistance-switching material. A switching area is naturally very well confined to the substantial central part of the oxygen gettering metal layer of the lower electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.