Dynamic soft program trims
US8199585B2 · kind B2 · utility
4Cited by
8References
20Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Apr 4, 2011 |
| Grant date | Jun 12, 2012 |
| Priority date | — |
| Expiry date | Apr 4, 2031 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/344
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Systems and methods are disclosed for modifying soft-programming trims of a non-volatile memory device, such as a flash memory device. The soft-programming trims may be modified based on a count of erase pulses applied to memory cells of the memory device. The number of erase pulses used to erase memory cells may be indicative of accumulated charge in the memory cell. The start voltage, step size, pulse width, number of pulses, pulse ramp, ramp rate, or any other trim of the soft-programming operation may be modified in response to the number of erase pulses.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.