Process of making a BAW resonator bi-layer top electrode
US8201311B1 · kind B1 · utility
1Cited by
23References
14Claims
0Family size
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Key dates
| Filing date | Aug 6, 2008 |
| Grant date | Jun 19, 2012 |
| Priority date | — |
| Expiry date | Nov 5, 2029 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49156
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A piezoelectric layer is coupled to a bottom electrode in a method of fabricating a piezoelectric resonator. A bottom metal layer of a top electrode is deposited on the piezoelectric layer. The bottom metal layer is patterned and etched. A top metal layer of the top electrode is deposited on the etched bottom metal layer. The top metal layer is patterned and etched. An interconnect metal layer is deposited on the etched top metal layer and the piezoelectric layer such that the interconnect metal layer isolates the bottom metal layer from subsequent etch steps.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.