Wafer through silicon via forming method and equipment therefor
US8202744B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 30, 2009 |
| Grant date | Jun 19, 2012 |
| Priority date | — |
| Expiry date | Jul 29, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76898
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided are a wafer through silicon via (TSV) forming method and equipment therefor. The wafer TSV forming method includes the operations of arranging a wafer having a front surface having a circuit area patterned thereon; recognizing locations of bond pads in the circuit area of the front surface of the wafer by using an image recognition camera, and converting the recognition of the locations into bond pad location information with respect to a back surface of the wafer; flipping the wafer; forming etching holes with middle depth in the back surface of the wafer by using a laser in a manner to match the locations of the bond pads by using the bond pad location information from the image recognition camera; and performing a plasma isotropic etching on the back surface having formed therein the etching holes with middle depth, thereby forming TSVs penetrating the bond pads.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.