Method for growth of semipolar (Al,In,Ga,B)N optoelectronic devices

US8203159B2 · kind B2 · utility

Assignee

• The Regents of the University of California · US

Inventors

• Hong Zhong · Temple City, US
• John F. Kaeding · Mountain View, US
• Rajat Sharma · San Jose, US
• James S. Speck · Fremont, US
• Steven P. DenBaars · Goleta, US
• Shuji Nakamura · Goleta, US

Key dates

• Filing date: Sep 24, 2010
• Grant date: Jun 19, 2012
• Expiry date: Sep 24, 2030

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02E10/50
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method of fabricating an optoelectronic device, comprising growing an active layer of the device on an oblique surface of a suitable material, wherein the oblique surface comprises a facetted surface. The present invention also discloses a method of fabricating the facetted surfaces. One fabrication process comprises growing an epitaxial layer on a suitable material, etching the epitaxial layer through a mask to form the facets having a specific crystal orientation, and depositing one or more active layers on the facets. Another method comprises growing a layer of material using a lateral overgrowth technique to produce a facetted surface, and depositing one or more active layers on the facetted surfaces. The facetted surfaces are typically semipolar planes.