Hong Zhong
19Patents
5h-index
36Co-inventors
62Inventor score
Filing activity: Apr 29, 2003 → Aug 28, 2020
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7550097B2 | Thermal conductive material utilizing electrically conductive nanoparticles | Electricity | 40 | Active |
| US7013965B2 | Organic matrices containing nanomaterials to enhance bulk thermal conductivity | Emerging Cross-Sectional Technologies | 38 | Expired |
| US7527859B2 | Enhanced boron nitride composition and compositions made therewith | Emerging Cross-Sectional Technologies | 25 | Active |
| US8114698B2 | High light extraction efficiency nitride based light emitting diode by surface roughening | Electricity | 12 | Active |
| US7858996B2 | Method for growth of semipolar (Al,In,Ga,B)N optoelectronic devices | Emerging Cross-Sectional Technologies | 5 | Active |
| US9040326B2 | High light extraction efficiency nitride based light emitting diode by surface roughening | Electricity | 4 | Active |
| US8203159B2 | Method for growth of semipolar (Al,In,Ga,B)N optoelectronic devices | Emerging Cross-Sectional Technologies | 4 | Active |
| US8835200B2 | High light extraction efficiency nitride based light emitting diode by surface roughening | Electricity | 3 | Active |
| US8193079B2 | Method for conductivity control of (Al,In,Ga,B)N | Electricity | 3 | Active |
| US8044383B2 | Thin P-type gallium nitride and aluminum gallium nitride electron-blocking layer free gallium nitride-based light emitting diodes | Electricity | 3 | Active |
| US8227819B2 | Thin p-type gallium nitride and aluminum gallium nitride electron-blocking layer free gallium nitride-based light emitting diodes | Electricity | 3 | Active |
| US9579396B2 | Finite fully addressable nucleic acid nanostructures as nanocarriers for delivery of pharmaceuticals | Emerging Cross-Sectional Technologies | 1 | Active |
| US8841428B2 | Polynucleotide nanomechanical device that acts as an artificial ribosome and translates DNA signals into polymer assembly instructions | Chemistry; Metallurgy | 0 | Active |
| USD580369S1 | Card connector | General | 0 | Expired |
| US10913863B2 | Cesium tungsten bronze-based self-cleaning nano heat-insulation coating material and preparation method thereof | Chemistry; Metallurgy | 0 | Active |
| US10737280B2 | Method of using flotation collector containing azolethione structure | Performing Operations; Transporting | 0 | Active |
| US8709925B2 | Method for conductivity control of (Al,In,Ga,B)N | Electricity | 0 | Active |
| US11970441B2 | Method for preparing thionocarbamate and co-producing 2-mercaptoethanol or O-alkylthioethyl xanthate | Performing Operations; Transporting | 0 | Active |
| US12054452B2 | Method and system for preparing xanthate by slurry method | Performing Operations; Transporting | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.