Field tunable spin torque oscillator for RF signal generation
US8203389B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 6, 2010 |
| Grant date | Jun 19, 2012 |
| Priority date | — |
| Expiry date | Dec 22, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03B15/006
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A spin transfer oscillator (STO) device is disclosed with a giant magnetoresistive (GMR) junction comprising a magnetic resistance layer (MRL)/spacer/magnetic oscillation layer (MOL) configuration, and a MR sensor including a sensing layer/junction layer/reference layer configuration. MOL and sensing layer are magnetostatically coupled and separated by a conductive spacer. MRL has perpendicular magnetic anisotropy while MOL and sensing layer have a Mst (saturation magnetization×thickness) value within ±50% of each other. When a magnetic field is applied perpendicular to the planes of the MOL and a high density current flows from the conductive spacer to the MRL, a MOL oscillation state with a certain frequency is induced. Consequently, the sensing layer oscillates with a similar RF frequency and when a low density current flows across the MR sensor, an AC voltage signal is generated to determine the sensing layer frequency that can be varied by adjusting the applied field.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.