Inventor · San Jose, CA, US

Yuchen Zhou

200Patents
23h-index
112Co-inventors
89Inventor score

Filing activity: Sep 28, 2006 → Dec 20, 2024

Most-cited inventions

PatentTitleAreaCited byStatus
US8772888B2 MTJ MRAM with stud patterning Electricity 220 Active
US8574928B2 MRAM fabrication method with sidewall cleaning Electricity 124 Active
US8064244B2 Thin seeded Co/Ni multilayer film with perpendicular anisotropy for spintronic device applications Emerging Cross-Sectional Technologies 92 Active
US8203389B1 Field tunable spin torque oscillator for RF signal generation Electricity 71 Active
US8679039B2 Ultrasonic device with integrated specimen dispenser Human Necessities 55 Active
US8274811B2 Assisting FGL oscillations with perpendicular anisotropy for MAMR Emerging Cross-Sectional Technologies 55 Active
USD664665S1 Skin care and beautification device General 54 Active
US8623452B2 Magnetic random access memory (MRAM) with enhanced magnetic stiffness and method of making same Emerging Cross-Sectional Technologies 46 Active
US9793319B2 Multilayered seed structure for perpendicular MTJ memory element Electricity 44 Active
US9492645B2 Skin treatment device with an integrated specimen dispenser Human Necessities 42 Active
US8184411B2 MTJ incorporating CoFe/Ni multilayer film with perpendicular magnetic anisotropy for MRAM application Emerging Cross-Sectional Technologies 40 Active
US8208219B2 Modified field generation layer for microwave assisted magnetic recording Physics 39 Active
US9166154B2 MTJ stack and bottom electrode patterning process with ion beam etching using a single mask Electricity 39 Active
US9070855B2 Magnetic random access memory having perpendicular enhancement layer Electricity 37 Active
US9608038B2 Magnetic tunnel junction (MTJ) memory element having tri-layer perpendicular reference layer Electricity 37 Active
US9196332B2 Perpendicular magnetic tunnel junction (pMTJ) with in-plane magneto-static switching-enhancing layer Electricity 36 Active
US8559215B2 Perpendicular magnetic random access memory (MRAM) device with a stable reference cell Emerging Cross-Sectional Technologies 34 Active
US9780300B2 Magnetic memory element with composite perpendicular enhancement layer Performing Operations; Transporting 34 Active
USD633628S1 Beauty massage General 34 Expired
US8779537B2 Spin transfer torque magnetic random access memory (STTMRAM) having graded synthetic free layer Electricity 28 Active
US9166143B1 Magnetic random access memory with multiple free layers Physics 25 Active
US8300356B2 CoFe/Ni Multilayer film with perpendicular anistropy for microwave assisted magnetic recording Emerging Cross-Sectional Technologies 24 Active
US9596099B2 Scalable network virtualization with aggregate endpoints Electricity 24 Active
US8036069B1 Plasmon shield to shape and reduce optical spot Physics 23 Active
US8488373B2 Spin injection layer robustness for microwave assisted magnetic recording Emerging Cross-Sectional Technologies 21 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.