Method for manufacturing a semiconductor component that includes a field plate
US8207037B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 31, 2007 |
| Grant date | Jun 26, 2012 |
| Priority date | — |
| Expiry date | Oct 17, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/685
Abstract
A semiconductor component that includes a field plate and a semiconductor device and a method of manufacturing the semiconductor component. A semiconductor material includes an epitaxial layer disposed on a semiconductor substrate. A trench having an upper portion and a lower portion is formed in the epitaxial layer. A portion of a field plate is formed in the lower portion of the trench, wherein the field plate is electrically isolated from trench sidewalls. A gate structure is formed in the upper portion of the trench, wherein a gate oxide is formed from opposing sidewalls of the trench. Gate electrodes are formed adjacent to the gate oxide formed from the opposing sidewalls and a dielectric material is formed adjacent to the gate electrode. Another portion of the field plate is formed in the upper portion of the trench and cooperates with the portion of the field plate formed in the lower portion of the trench to form the field plate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.