Method for improving adhesion of low resistivity tungsten/tungsten nitride layers
US8207062B2 · kind B2 · utility
39Cited by
63References
15Claims
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Key dates
| Filing date | Sep 9, 2009 |
| Grant date | Jun 26, 2012 |
| Priority date | — |
| Expiry date | Apr 14, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76856
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Methods of improving the adhesion of low resistivity tungsten/tungsten nitride layers are provided. Low resistivity tungsten/tungsten nitride layers with good adhesion are formed by treating a tungsten or tungsten nitride layer before depositing low resistivity tungsten. Treatments include a plasma treatment and a temperature treatment. According to various embodiments, the treatment methods involve different gaseous atmospheres and plasma conditions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.