Dry etching method
US8207066B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 30, 2009 |
| Grant date | Jun 26, 2012 |
| Priority date | — |
| Expiry date | Jan 5, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3065
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention provides a dry etching method capable of obtaining a good profile with little side etch without receiving the restriction of a micro loading effect. A dry etching method for etching a sample having formed on the surface thereof a pattern with an isolated portion and a dense portion using plasma comprises a first etching step using an etching gas containing a CF-based gas and a nitrogen gas in which an etching rate of a dense portion of the pattern is greater than the etching rate of the isolated portion of the mask pattern, and a second etching step in which the etching rate of the isolated portion of the pattern is greater than the etching rate of the dense portion of the pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.