Maintenance of photoresist activity on the surface of dielectric arcs for 90 nm feature sizes
US8211626B2 · kind B2 · utility
1Cited by
5References
10Claims
0Family size
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Key dates
| Filing date | Dec 13, 2006 |
| Grant date | Jul 3, 2012 |
| Priority date | — |
| Expiry date | Oct 21, 2027 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/16
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
We have determined that it is necessary to remove hydroxyl groups from the surface of a DARC over which a CAR photoresist is applied, to reduce poisoning of the photoresist during imaging. The poisoning is reduced by treating the surface of the DARC film with a hydrogen or helium-containing plasma which is capable of removing the hydroxyl groups.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.