Patent · US Active

Method of forming a dielectric cap layer for a copper metallization by using a hydrogen based thermal-chemical treatment

US8211795B2 · kind B2 · utility

0Cited by

4References

22Claims

0Family size

Assignee

Advanced Micro Devices, Inc. · US

Inventors

Joerg Hohage · Dresden, DE
Volker Kahlert · Dresden, DE
Hartmut Ruelke · Dresden, DE
Ulrich Mayer · Weißenhorn, DE

Key dates

Filing date	Jan 8, 2008
Grant date	Jul 3, 2012
Priority date	—
Expiry date	Sep 6, 2029

Classification

Technology area (CPC H)Electricity
CPC primaryH01L21/02211
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A new technique is disclosed in which a barrier/cap layer for a copper based metal line is formed by using a thermal-chemical treatment based on hydrogen with a surface modification on the basis of a silicon-containing precursor followed by an in situ plasma based deposition of silicon based dielectric barrier material. The thermal-chemical cleaning process is performed in the absence of any plasma ambient.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.