System for forming SiC crystals having spatially uniform doping impurities
US8216369B2 · kind B2 · utility
8Cited by
15References
9Claims
0Family size
Assignee
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Key dates
| Filing date | Oct 5, 2009 |
| Grant date | Jul 10, 2012 |
| Priority date | — |
| Expiry date | Oct 5, 2029 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T117/108
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A physical vapor transport system includes a growth chamber charged with source material and a seed crystal in spaced relation, and at least one capsule having at least one capillary extending between an interior thereof and an exterior thereof, wherein the interior of the capsule is charged with a dopant. Each capsule is installed in the growth chamber. Through a growth reaction carried out in the growth chamber following installation of each capsule therein, a crystal is formed on the seed crystal using the source material, wherein the formed crystal is doped with the dopant.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.