Plasma etching method, plasma etching apparatus, control program and computer-readable storage medium
US8216485B2 · kind B2 · utility
1Cited by
3References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 31, 2008 |
| Grant date | Jul 10, 2012 |
| Priority date | — |
| Expiry date | Mar 25, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31144
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A plasma etching method etches an organic film formed on a target substrate by using a plasma of a processing gas via a silicon-containing mask. The processing gas is a gaseous mixture of an oxygen-containing gas, a rare gas and a carbon fluoride gas. A computer-executable control program controls a plasma etching apparatus to perform the plasma etching method. A computer-readable storage medium stores therein a computer-executable control program.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.