Dielectric recovery of plasma damaged low-k films by UV-assisted photochemical deposition
US8216861B1 · kind B1 · utility
11Cited by
1References
10Claims
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Key dates
| Filing date | Jun 28, 2011 |
| Grant date | Jul 10, 2012 |
| Priority date | — |
| Expiry date | Jun 28, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02203
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods for the repair of damaged low k films are provided. Damage to the low k films occurs during processing of the film such as during etching, ashing, and planarization. The processing of the low k film causes water to store in the pores of the film and further causes hydrophilic compounds to form in the low k film structure. Repair processes incorporating ultraviolet (UV) radiation and carbon-containing compounds remove the water from the pores and further remove the hydrophilic compounds from the low k film structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.