Treatment for bonding interface stabilization
US8216916B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 19, 2007 |
| Grant date | Jul 10, 2012 |
| Priority date | — |
| Expiry date | Dec 13, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76254
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method and/or system are provided for producing a structure comprising a thin layer of semiconductor material on a substrate. The method includes creating an area of embrittlement in the thickness of a donor substrate, bonding the donor substrate with a support substrate and detaching the donor substrate at the level of the area of embrittlement to transfer a thin layer of the donor substrate onto the support substrate. The method also includes thermal treatment of this resulting structure to stabilize the bonding interface between the thin layer and the substrate support. The invention also relates to the structures obtained by such a process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.