Nonvolatile semiconductor memory device and method for driving same
US8218358B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 5, 2010 |
| Grant date | Jul 10, 2012 |
| Priority date | — |
| Expiry date | Jan 13, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B43/27
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
According to one embodiment, a nonvolatile semiconductor memory device includes a substrate, a stacked body, a semiconductor pillar, a charge storage film, and a drive circuit. The stacked body is provided on the substrate. The stacked body includes a plurality of insulating films alternately stacked with a plurality of electrode films. A through-hole is made in the stacked body to align in a stacking direction. The semiconductor pillar is buried in an interior of the through-hole. The charge storage film is provided between the electrode film and the semiconductor pillar. The drive circuit supplies a potential to the electrode film. The diameter of the through-hole differs by a position in the stacking direction. The drive circuit supplies a potential to reduce a potential difference with the semiconductor pillar as a diameter of the through-hole piercing the electrode film decreases.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.