Patent · US Active

Method and system for forming a capacitive micromachined ultrasonic transducer

US8222065B1 · kind B1 · utility

81Cited by

0References

20Claims

0Family size

Assignee

NATIONAL SEMICONDUCTOR CORPORATION · US

Inventors

Peter Smeys · White Plains, US
Peter Johnson · Sunnyvale, US
Gokhan Percin · Los Gatos, US

Key dates

Filing date	Oct 2, 2009
Grant date	Jul 17, 2012
Priority date	—
Expiry date	Mar 23, 2030

Classification

Technology area (CPC H)Electricity
CPC primaryH10D88/00
WIPO fieldChemical engineering
WIPO sectorChemistry

Abstract

A method for forming a capacitive micromachined ultrasonic transducer (CMUT) is provided that includes forming oxide features outwardly of a CMUT control chip in a silicon wafer. The oxide features are planarized. A silicon-on-insulator (SOI) wafer is bonded to the planarized oxide features. For a particular embodiment, the SOI wafer comprises a single crystal epitaxial layer, a buried oxide layer and a silicon layer, and the single crystal epitaxial layer is bonded to the planarized oxide features, after which the silicon layer and the buried oxide layer of the SOI wafer are removed, leaving the single crystal epitaxial layer bonded to the oxide layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.