Semiconductor device and method of manufacturing the same

US8222099B2 · kind B2 · utility

Assignee

• INSTITUTE OF MICROELECTRONICS OF THE CHINESE ACADEMY OF SCIENCES · CN

Inventors

• Wenwu Wang · Beijing, CN
• Kai Han · Zhubeikou, TW
• Shijie Chen · Shanghai, CN
• Xiaolei Wang · Beijing, CN
• Dapeng Chen · Beijing, CN

Key dates

• Filing date: Jun 24, 2010
• Grant date: Jul 17, 2012
• Expiry date: Jun 24, 2030

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S438/926

Abstract

A semiconductor device and a method of manufacturing the same are provided. A multi-component high-k interface layer containing elements of the substrate is formed from a ultra-thin high-k dielectric material in a single-layer structure of atoms by rapid annealing in the manufacturing of a CMOS transistor by the replacement gate process, and a high-k gate dielectric layer with a higher dielectric constant and a metal gate layer are formed thereon. The EOT of the device is effectively decreased, and the diffusion of atoms in the high-k gate dielectric layer from an upper level thereof is effectively prevented by the optimized high-k interface layer at high-temperature treatment. Thus, the present invention may also avoid the growth of the interface layers and the degradation of carrier mobility. Furthermore, the present invention may further alleviate the problem of high interface state and interface roughness caused by direct contact of the high-k gate dielectric layer with high dielectric constant and the substrate, and thus the overall performance of the device is effectively enhanced.