Method of dicing wafer using plasma
US8222120B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 28, 2009 |
| Grant date | Jul 17, 2012 |
| Priority date | — |
| Expiry date | Oct 27, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/78
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided is a method of dicing a wafer that is thin and includes a low-K material using plasma without causing chipping and cracking during sawing without using an etch mask and without performing a separate wafer coating process. The method includes recognizing scribe lines of a front side of the wafer by using an image recognizing unit to obtain recognition information, performing two etching processes, wherein at least one includes plasma etching, on a backside of the wafer by using the recognition information to separate the wafer into a plurality of semiconductor chips, and adhering the plurality of semiconductor chips to an extended tape or a die attach film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.