Non-volatile memory device including phase-change material
US8222625B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Jan 26, 2010 |
| Grant date | Jul 17, 2012 |
| Priority date | — |
| Expiry date | Sep 24, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8828
Abstract
A non-volatile memory device including a phase-change material, which has a low operating voltage and low power consumption, includes a lower electrode; a phase-change material layer formed on the lower electrode so as to be electrically connected to the lower electrode, wherein the phase-change material layer includes a phase-change material having a composition represented by SnXSbYTeZ or, alternatively with substitutions, in whole or in part, of silicon and/or indium for tin, arsenic and/or bismuth for antimony, and selenium for tellurium; and an upper electrode formed on the phase-change material layer so as to be electrically connected to the phase-change material layer. Here, 0.001≦X≦0.3, 0.001≦Y≦0.8, 0.1≦Z≦0.8, and X+Y+Z=1.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.