Systems and methods for detecting defects on a wafer
US8223327B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 26, 2009 |
| Grant date | Jul 17, 2012 |
| Priority date | — |
| Expiry date | Jul 3, 2030 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N2021/887
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
Systems and methods for detecting defects on a wafer are provided. One method includes generating output for a wafer by scanning the wafer with an inspection system using first and second optical states of the inspection system. The first and second optical states are defined by different values for at least one optical parameter of the inspection system. The method also includes generating first image data for the wafer using the output generated using the first optical state and second image data for the wafer using the output generated using the second optical state. In addition, the method includes combining the first image data and the second image data corresponding to substantially the same locations on the wafer thereby creating additional image data for the wafer. The method further includes detecting defects on the wafer using the additional image data.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.