GCIB-treated resistive device
US8223539B2 · kind B2 · utility
58Cited by
10References
38Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 26, 2010 |
| Grant date | Jul 17, 2012 |
| Priority date | — |
| Expiry date | Oct 13, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B63/30
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The present disclosure includes GCIB-treated resistive devices, devices utilizing GCIB-treated resistive devices (e.g., as switches, memory cells), and methods for forming the GCIB-treated resistive devices. One method of forming a GCIB-treated resistive device includes forming a lower electrode, and forming an oxide material on the lower electrode. The oxide material is exposed to a gas cluster ion beam (GCIB) until a change in resistance of a first portion of the oxide material relative to the resistance of a second portion of the oxide material. An upper electrode is formed on the first portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.