Ultra-thin film formation using gas cluster ion beam processing
US8226835B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 6, 2009 |
| Grant date | Jul 24, 2012 |
| Priority date | — |
| Expiry date | Jun 29, 2030 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/902
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of preparing a thin film on a substrate is described. The method comprises forming an ultra-thin hermetic film over a portion of a substrate using a gas cluster ion beam (GCIB), wherein the ultra-thin hermetic film has a thickness less than approximately 5 nm. The method further comprises providing a substrate in a reduced-pressure environment, and generating a GCIB in the reduced-pressure environment from a pressurized gas mixture. A beam acceleration potential and a beam dose are selected to achieve a thickness of the thin film less than about 5 nanometers (nm). The GCIB is accelerated according to the beam acceleration potential, and the accelerated GCIB is irradiated onto at least a portion of the substrate according to the beam dose. By doing so, the thin film is formed on the at least a portion of the substrate to achieve the thickness desired.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.