Method for producing a copper connection between two sides of a substrate

US8227340B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Uwe Seidel · Munich, DE
• Thorsten Obernhuber · Regensburg, DE
• Albert Birner · Regensburg, DE
• Georg Ehrentraut · Villach, AT

Key dates

• Filing date: Apr 30, 2009
• Grant date: Jul 24, 2012
• Expiry date: Jun 9, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/76898
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method for producing an electrically conductive connection between a first surface of a semiconductor substrate and a second surface of the semiconductor substrate includes producing a hole, forming an electrically conductive layer that includes tungsten, removing the electrically conductive layer from the first surface of the semiconductor substrate, filling the hole with copper and thinning the semiconductor substrate. The hole is produced from the first surface of the semiconductor substrate into the semiconductor substrate. The electrically conductive layer is removed from the first surface of the semiconductor substrate, wherein the electrically conductive layer remains at least with reduced thickness in the hole. The semiconductor substrate is thinned starting from a surface, which is an opposite surface of the first surface of the semiconductor substrate, to obtain the second surface of the semiconductor substrate with the hole being uncovered at the second surface of the semiconductor substrate.