Method of forming a mask pattern, method of forming a minute pattern, and method of manufacturing a semiconductor device using the same
US8227349B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 1, 2010 |
| Grant date | Jul 24, 2012 |
| Priority date | — |
| Expiry date | Jan 21, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B41/41
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a mask pattern, a method of forming a minute pattern, and a method of manufacturing a semiconductor device using the same, the method of forming the mask pattern including forming first mask patterns on a substrate; forming first preliminary capping layers on the first mask patterns; irradiating energy to the first preliminary capping patterns to form second preliminary capping layers ionically bonded with the first mask patterns; applying an acid to the second preliminary capping layers to form capping layers; forming a second mask layer between the capping layers, the second mask layer having a solubility lower than that of the capping layers; and removing the capping layers to form second mask patterns.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.